High-Sri concentration MOCVD-grown strained GeSn thin films evaluated using HAXPES and XRD base on synchrotron technique

K. Usuda, M. Yoshiki, K. Suda, Atusi Ogura, M. Tomita

研究成果: Conference contribution

抜粋

We demonstrate a GeSn growth method that uses new source gases to increase the Sn concentration of GeSn thin films, which are attracting attention as a next-generation semiconductor material for replacing for Si. Synchrotron radiation techniques are very useful for physical analysis of ultrathin films, particularly hard X-ray photoelectron spectroscopy, which can simultaneously analyze the outermost surface of the thin film and the bulk GeSn just underneath. As a result, we obtained results suggesting the growth of a high-quality GeSn thin film with suppression of surface Sn segregation and surface oxidation. Analysis of Sn concentration using a combination of Rutherford backscattering spectroscopy and secondary ion mass spectrometry revealed that the concentration of Sn was about 6.6 atom % and that the Sn content was uniform in the depth direction. These synchrotron techniques are expected to facilitate the preparation of high-quality, high-Sn GeSn thin films.

元の言語English
ホスト出版物のタイトルECS Transactions
編集者Jean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
出版者Electrochemical Society Inc.
ページ411-418
ページ数8
エディション7
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 1 1 2018
イベント8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 30 9 20184 10 2018

出版物シリーズ

名前ECS Transactions
番号7
86
ISSN(印刷物)1938-6737
ISSN(電子版)1938-5862

Conference

Conference8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
Mexico
Cancun
期間30/09/184/10/18

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    Usuda, K., Yoshiki, M., Suda, K., Ogura, A., & Tomita, M. (2018). High-Sri concentration MOCVD-grown strained GeSn thin films evaluated using HAXPES and XRD base on synchrotron technique. : J-M. Hartmann, A. Thean, A. Ogura, X. Gong, D. Harame, M. Caymax, G. Niu, A. Schulze, Q. Liu, G. Mashi, S. Miyazaki, A. Mai, & M. Osting (版), ECS Transactions (7 版, pp. 411-418). (ECS Transactions; 巻数 86, 番号 7). Electrochemical Society Inc.. https://doi.org/10.1149/08607.0411ecst