TY - JOUR
T1 - Effects of ZnxMn1-xS buffer layer on nonpolar AlN growth on Si (100) substrate
AU - Morita, Masaya
AU - Ishibashi, Keiji
AU - Takahashi, Kenichiro
AU - Chikyow, Toyohiro
AU - Ogura, Atsushi
AU - Nagata, Takahiro
N1 - Publisher Copyright:
© 2021 The Japan Society of Applied Physics.
PY - 2021/6
Y1 - 2021/6
N2 - Thin film growth of Zn x Mn1-x S on a Si (100) substrate by sputtering was investigated for nonpolar AlN film growth on Si (100) substrate. The Zn x Mn1-x S buffer layer reduces the large differences in thermal expansion coefficient and lattice constants between AlN and Si. Although the solubility of ZnS in MnS is less than 5% at 800 °C in bulk form, the insertion of a room-temperature MnS layer between Zn x Mn1-x S and Si enabled (100)-oriented cubic-Zn x Mn1-x S film growth even at x = 9.5%, which is a metastable phase and a phase separation region in bulk form. On the (100)-oriented cubic Zn x Mn1-x S film, nonpolar AlN growth was achieved by sputtering. Furthermore, X-ray photoelectron spectroscopy measurements revealed that the Zn x Mn1-x S film improved the stability of the AlN/Zn x Mn1-x S interface. Zn x Mn1-x S has the potential to enable nonpolar AlN growth on large-diameter Si (100) substrates.
AB - Thin film growth of Zn x Mn1-x S on a Si (100) substrate by sputtering was investigated for nonpolar AlN film growth on Si (100) substrate. The Zn x Mn1-x S buffer layer reduces the large differences in thermal expansion coefficient and lattice constants between AlN and Si. Although the solubility of ZnS in MnS is less than 5% at 800 °C in bulk form, the insertion of a room-temperature MnS layer between Zn x Mn1-x S and Si enabled (100)-oriented cubic-Zn x Mn1-x S film growth even at x = 9.5%, which is a metastable phase and a phase separation region in bulk form. On the (100)-oriented cubic Zn x Mn1-x S film, nonpolar AlN growth was achieved by sputtering. Furthermore, X-ray photoelectron spectroscopy measurements revealed that the Zn x Mn1-x S film improved the stability of the AlN/Zn x Mn1-x S interface. Zn x Mn1-x S has the potential to enable nonpolar AlN growth on large-diameter Si (100) substrates.
UR - http://www.scopus.com/inward/record.url?scp=85104858350&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/abf07a
DO - 10.35848/1347-4065/abf07a
M3 - Article
AN - SCOPUS:85104858350
SN - 0021-4922
VL - 60
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SC
M1 - SCCG02
ER -