Strain evaluation of laser-annealed SiGe thin layers

S. Komago, T. Murakami, K. Yoshioka, R. Yokogawa, J. O. Borland, T. Kuroi, T. Tabata, K. Huet, N. Horiguchi, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe channel is widely used because carrier mobilities of SiGe are higher than those of Si. C or Ge ion implantation in the source/drain region is expected to be effective to induce tensile or compressive strain, respectively, in the SiGe channel. Laser annealing enables to remove lattice damage efficiently with minimum thermal budget. In this study, laser-annealed SiGe thin layers with and without C or Ge implantation were evaluated by Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). We demonstrated the effect of C or Ge implantation as well as Ge redistribution by the laser annealing on the Raman peak shift.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
PublisherElectrochemical Society Inc.
Pages59-65
Number of pages7
Edition7
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 1 Jan 2018
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 30 Sep 20184 Oct 2018

Publication series

NameECS Transactions
Number7
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period30/09/184/10/18

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  • Cite this

    Komago, S., Murakami, T., Yoshioka, K., Yokogawa, R., Borland, J. O., Kuroi, T., Tabata, T., Huet, K., Horiguchi, N., & Ogura, A. (2018). Strain evaluation of laser-annealed SiGe thin layers. In J-M. Hartmann, A. Thean, A. Ogura, X. Gong, D. Harame, M. Caymax, G. Niu, A. Schulze, Q. Liu, G. Mashi, S. Miyazaki, A. Mai, & M. Osting (Eds.), ECS Transactions (7 ed., pp. 59-65). (ECS Transactions; Vol. 86, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/08607.0059ecst