Single-electron transport in metal/polyimide:C60/metal junction

Yutaka Noguchi, Takaaki Manaka, Mitsumasa Iwamoto

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Metal/organic film/metal (MIM) junctions were fabricated using C 60 dispersed in spin-coated polyimide (PI) ultra-thin film. The current-voltage (I-V) characteristics of these new types of junctions exhibit a Coulomb staircase behavior at a temperature of 15.5 K, a behavior not observed with C60-free MIM junctions. It is obvious that the Coulomb staircase behavior observed was induced by C60 acting as a central electrode of the single-electron tunneling junction. We then analyzed the I-V characteristics of this MIM junction, taking into account both the Coulomb charging energy and the discrete energy states of the molecular central electrode. Comparing the experimental (V/I)dI/dV-V characteristics with the calculated ones, a possible energy structure for C60 in the junction was estimated.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalThin Solid Films
Publication statusPublished - 22 Aug 2003
EventThe 5th International Conference on Nano-Molecular Electronics - Kobe, Japan
Duration: 10 Dec 200212 Dec 2002


  • C
  • Coulomb blockade
  • Molecular electronics
  • Single-electron transport


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