Single-electron transport in metal/polyimide:C60/metal junction

Yutaka Noguchi; Takaaki Manaka; Mitsumasa Iwamoto

doi:10.1016/S0040-6090(03)00770-3

Single-electron transport in metal/polyimide:C₆₀/metal junction

Yutaka Noguchi, Takaaki Manaka, Mitsumasa Iwamoto

Department of Electronics and Bioinformatics

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Metal/organic film/metal (MIM) junctions were fabricated using C ₆₀ dispersed in spin-coated polyimide (PI) ultra-thin film. The current-voltage (I-V) characteristics of these new types of junctions exhibit a Coulomb staircase behavior at a temperature of 15.5 K, a behavior not observed with C₆₀-free MIM junctions. It is obvious that the Coulomb staircase behavior observed was induced by C₆₀ acting as a central electrode of the single-electron tunneling junction. We then analyzed the I-V characteristics of this MIM junction, taking into account both the Coulomb charging energy and the discrete energy states of the molecular central electrode. Comparing the experimental (V/I)dI/dV-V characteristics with the calculated ones, a possible energy structure for C₆₀ in the junction was estimated.

Original language	English
Pages (from-to)	369-373
Number of pages	5
Journal	Thin Solid Films
Volume	438-439
DOIs	https://doi.org/10.1016/S0040-6090(03)00770-3
Publication status	Published - 22 Aug 2003
Event	The 5th International Conference on Nano-Molecular Electronics - Kobe, Japan Duration: 10 Dec 2002 → 12 Dec 2002

Keywords

C
Coulomb blockade
Molecular electronics
Single-electron transport

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10.1016/S0040-6090(03)00770-3

Cite this

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title = "Single-electron transport in metal/polyimide:C60/metal junction",

abstract = "Metal/organic film/metal (MIM) junctions were fabricated using C 60 dispersed in spin-coated polyimide (PI) ultra-thin film. The current-voltage (I-V) characteristics of these new types of junctions exhibit a Coulomb staircase behavior at a temperature of 15.5 K, a behavior not observed with C60-free MIM junctions. It is obvious that the Coulomb staircase behavior observed was induced by C60 acting as a central electrode of the single-electron tunneling junction. We then analyzed the I-V characteristics of this MIM junction, taking into account both the Coulomb charging energy and the discrete energy states of the molecular central electrode. Comparing the experimental (V/I)dI/dV-V characteristics with the calculated ones, a possible energy structure for C60 in the junction was estimated.",

keywords = "C, Coulomb blockade, Molecular electronics, Single-electron transport",

author = "Yutaka Noguchi and Takaaki Manaka and Mitsumasa Iwamoto",

year = "2003",

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doi = "10.1016/S0040-6090(03)00770-3",

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pages = "369--373",

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note = "The 5th International Conference on Nano-Molecular Electronics ; Conference date: 10-12-2002 Through 12-12-2002",

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TY - JOUR

T1 - Single-electron transport in metal/polyimide:C60/metal junction

AU - Noguchi, Yutaka

AU - Manaka, Takaaki

AU - Iwamoto, Mitsumasa

PY - 2003/8/22

Y1 - 2003/8/22

N2 - Metal/organic film/metal (MIM) junctions were fabricated using C 60 dispersed in spin-coated polyimide (PI) ultra-thin film. The current-voltage (I-V) characteristics of these new types of junctions exhibit a Coulomb staircase behavior at a temperature of 15.5 K, a behavior not observed with C60-free MIM junctions. It is obvious that the Coulomb staircase behavior observed was induced by C60 acting as a central electrode of the single-electron tunneling junction. We then analyzed the I-V characteristics of this MIM junction, taking into account both the Coulomb charging energy and the discrete energy states of the molecular central electrode. Comparing the experimental (V/I)dI/dV-V characteristics with the calculated ones, a possible energy structure for C60 in the junction was estimated.

AB - Metal/organic film/metal (MIM) junctions were fabricated using C 60 dispersed in spin-coated polyimide (PI) ultra-thin film. The current-voltage (I-V) characteristics of these new types of junctions exhibit a Coulomb staircase behavior at a temperature of 15.5 K, a behavior not observed with C60-free MIM junctions. It is obvious that the Coulomb staircase behavior observed was induced by C60 acting as a central electrode of the single-electron tunneling junction. We then analyzed the I-V characteristics of this MIM junction, taking into account both the Coulomb charging energy and the discrete energy states of the molecular central electrode. Comparing the experimental (V/I)dI/dV-V characteristics with the calculated ones, a possible energy structure for C60 in the junction was estimated.

KW - C

KW - Coulomb blockade

KW - Molecular electronics

KW - Single-electron transport

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U2 - 10.1016/S0040-6090(03)00770-3

DO - 10.1016/S0040-6090(03)00770-3

M3 - Conference article

AN - SCOPUS:0043028648

VL - 438-439

SP - 369

EP - 373

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

T2 - The 5th International Conference on Nano-Molecular Electronics

Y2 - 10 December 2002 through 12 December 2002

ER -

Single-electron transport in metal/polyimide:C₆₀/metal junction

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