Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell

Takefumi Kamioka, Yutaka Hayashi, Kazuhiro Gotoh, Tomohiko Hara, Ryo Ozaki, Motoo Morimura, Ayako Shimizu, Kyotaro Nakamura, Noritaka Usami, Atsushi Ogura, Yoshio Ohshita

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Abstract

The theoretical lateral current of the surface inversion layer in a crystalline silicon (cSi) surface for a p-aSi:H/i-aSi:H/cSi heterojunction (SHJ) solar cell was calculated using computer simulation and was compared with the experimental one to study defects/traps at the aSi:H/cSi interface and/or in the cSi surface and to detect the acceptor concentration (Na) in p-aSi:H. To experimentally extract the lateral surface inversion layer current, a field-effect transistor type test element group device was co-integrated with SHJ cells on the same wafer. From the correlation between the experimental and calculated lateral surface inversion layer current, the density of defects/traps (Dit) at the aSi:H/cSi interface and/or in the cSi surface and the value of Na were extracted. The calculated lateral surface inversion layer current stayed unchanged for various minority carrier lifetimes in the substrate, suggesting that this method is not suffered from the variation in the material parameters in the substrate.

Original languageEnglish
Article number026503
JournalJapanese Journal of Applied Physics
Volume60
Issue number2
DOIs
Publication statusPublished - Feb 2021

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