Preliminary study of suppression of backscattering phenomenon from drain region on double gate MOSFETs characteristics

Toshiyuki Tsutsumi, Kazutaka Tomizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages114-115
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2007
Events20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan
Duration: 5 Nov 20078 Nov 2007

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Conference

Conferences20th International Microprocesses and Nanotechnology Conference, MNC 2007
CountryJapan
CityKyoto
Period5/11/078/11/07

Cite this

Tsutsumi, T., & Tomizawa, K. (2007). Preliminary study of suppression of backscattering phenomenon from drain region on double gate MOSFETs characteristics. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 114-115). [4456131] (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456131