Photoluminescence characterization of Si crystals for microelectronic and photovoltaic devices

Michio Tajima, Gen Kato, Kei Nakagawa, Fumito Higuchi, Atsushi Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated the effectiveness of the PL technique for quantifying donor and acceptor impurities and for analyzing dislocations and oxygen precipitates in Si. A clear explanation is given of the systematic variation of PL spectra depending on the donor and acceptor concentrations in Si at cryogenic temperatures. On the basis of this spectral variation we developed the PL method for quantitative impurity analysis. The JIS/SEMI standard method was extended to 1×1014 - 1×1017 cm-3 by raising the sample temperature. Further extension to 1×1018 cm-3 was proposed by utilizing the universal peak shift of the ICBE band. DA pair luminescence in highly doped and highly compensated Si allowed us to identify the species of impurities and to extract quantitative information by its intensity comparison with the ICBE band. We identified the origin of the 0. 8 eV band as the superposition of two dislocation-related components at approximately 0.79 and 0.94 eV, and one oxygen-precipitation-related component at about 0.87 eV. The presence of oxygen precipitates was confirmed by mass spectroscopy and by oxygen mapping after luminescence activation. Anisotropic properties expected for the dislocation-related component were revealed by polarized luminescence imaging.

Original languageEnglish
Title of host publication15th International Workshop on Junction Technology, IWJT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages34-39
Number of pages6
ISBN (Electronic)9784863485174
DOIs
Publication statusPublished - 9 May 2016
Event15th International Workshop on Junction Technology, IWJT 2015 - Kyoto, Japan
Duration: 11 Jun 201512 Jun 2015

Publication series

Name15th International Workshop on Junction Technology, IWJT 2015

Conference

Conference15th International Workshop on Junction Technology, IWJT 2015
CountryJapan
CityKyoto
Period11/06/1512/06/15

Cite this

Tajima, M., Kato, G., Nakagawa, K., Higuchi, F., & Ogura, A. (2016). Photoluminescence characterization of Si crystals for microelectronic and photovoltaic devices. In 15th International Workshop on Junction Technology, IWJT 2015 (pp. 34-39). [7467070] (15th International Workshop on Junction Technology, IWJT 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2015.7467070