Ni precursor for chemical vapor deposition of NiSi

Masato Ishikawa, Takeshi Kada, Hideaki Machida, Yoshio Ohshita, Atsushi Ogura

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Nickel thin film is an attractive material for use as electrodes or contacts of metal oxide semiconductor field effect transistors (MOSFETs), and numerous studies have focused on Ni monosilicide (NiSi). Bis- methylcyclopentadienyl-nickel [(MeCp)2Ni] is a dark green solid at room temperature, which becomes liquid at 36°C. Thermogravimetric differential thermal analysis (TGDTA) measurements revealed that most of the (MeCp)2Ni is vaporized without thermal decomposition and it decomposes from 200°C to 250°C. (MeCp)2Ni has a low viscosity and a high vapor pressure (1 Torr at 73°C), and its transportability is sufficiently good for it to be used as a chemical vapor deposition (CVD) precursor. Ni was deposited at 300°C by CVD using a (MeCp) 2Ni/H2 gas system. Ni reacted with the Si substrate, and X-ray diffraction (XRD) analysis showed that a part of the suicides had formed on the Si substrate. Si3H8 injection prevents the Si substrate from being consumed by the suicide reaction, and a conformal NiSi film with a flat interface on the Si substrate was obtained.

Original languageEnglish
Pages (from-to)1833-1836
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - Apr 2004

Keywords

  • (MeCp)Ni, Ni, NiSi, NiSi
  • CVD
  • Decomposition temperature
  • Vapor pressure

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