Nickel thin film is an attractive material for use as electrodes or contacts of metal oxide semiconductor field effect transistors (MOSFETs), and numerous studies have focused on Ni monosilicide (NiSi). Bis- methylcyclopentadienyl-nickel [(MeCp)2Ni] is a dark green solid at room temperature, which becomes liquid at 36°C. Thermogravimetric differential thermal analysis (TGDTA) measurements revealed that most of the (MeCp)2Ni is vaporized without thermal decomposition and it decomposes from 200°C to 250°C. (MeCp)2Ni has a low viscosity and a high vapor pressure (1 Torr at 73°C), and its transportability is sufficiently good for it to be used as a chemical vapor deposition (CVD) precursor. Ni was deposited at 300°C by CVD using a (MeCp) 2Ni/H2 gas system. Ni reacted with the Si substrate, and X-ray diffraction (XRD) analysis showed that a part of the suicides had formed on the Si substrate. Si3H8 injection prevents the Si substrate from being consumed by the suicide reaction, and a conformal NiSi film with a flat interface on the Si substrate was obtained.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 2004|
- (MeCp)Ni, Ni, NiSi, NiSi
- Decomposition temperature
- Vapor pressure