Body-bias control technique which is useful method with fully-depleted silicon-on-insulator (FD-SOI) transistor circuits for low-power design is employed for an optimization method of the tradeoff between RF performance and current consumption. A 2.4-GHz low-power low-noise amplifier (LNA) is designed with a 28-nm FD-SOI process. By tuning drain current and body-biases, the LNA with low power consumption can be designed while keeping the performance of zero body-bias.
|Number of pages||2|
|Journal||IEEJ Transactions on Electronics, Information and Systems|
|Publication status||Published - 2018|
- 28nm FD-SOI
- Body bias control
- Low power
- Low-noise amplifier