Low-power low-noise amplifier employing body bias control with 28 nm FD-SOI process

Nobuaki Mitsuya; Yuki Fukuda; Kawori Sekine; Kazuyuki Wada

doi:10.1541/ieejeiss.138.84

Low-power low-noise amplifier employing body bias control with 28 nm FD-SOI process

Nobuaki Mitsuya, Yuki Fukuda, Kawori Sekine, Kazuyuki Wada

Department of Electronics and Bioinformatics

Research output: Contribution to journal › Article › peer-review

Abstract

Body-bias control technique which is useful method with fully-depleted silicon-on-insulator (FD-SOI) transistor circuits for low-power design is employed for an optimization method of the tradeoff between RF performance and current consumption. A 2.4-GHz low-power low-noise amplifier (LNA) is designed with a 28-nm FD-SOI process. By tuning drain current and body-biases, the LNA with low power consumption can be designed while keeping the performance of zero body-bias.

Original language	English
Pages (from-to)	84-85
Number of pages	2
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	138
Issue number	1
DOIs	https://doi.org/10.1541/ieejeiss.138.84
Publication status	Published - 2018

Keywords

28nm FD-SOI
Body bias control
Low power
Low-noise amplifier

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10.1541/ieejeiss.138.84

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title = "Low-power low-noise amplifier employing body bias control with 28 nm FD-SOI process",

abstract = "Body-bias control technique which is useful method with fully-depleted silicon-on-insulator (FD-SOI) transistor circuits for low-power design is employed for an optimization method of the tradeoff between RF performance and current consumption. A 2.4-GHz low-power low-noise amplifier (LNA) is designed with a 28-nm FD-SOI process. By tuning drain current and body-biases, the LNA with low power consumption can be designed while keeping the performance of zero body-bias.",

keywords = "28nm FD-SOI, Body bias control, Low power, Low-noise amplifier",

author = "Nobuaki Mitsuya and Yuki Fukuda and Kawori Sekine and Kazuyuki Wada",

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AU - Wada, Kazuyuki

PY - 2018

Y1 - 2018

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AB - Body-bias control technique which is useful method with fully-depleted silicon-on-insulator (FD-SOI) transistor circuits for low-power design is employed for an optimization method of the tradeoff between RF performance and current consumption. A 2.4-GHz low-power low-noise amplifier (LNA) is designed with a 28-nm FD-SOI process. By tuning drain current and body-biases, the LNA with low power consumption can be designed while keeping the performance of zero body-bias.

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KW - Low power

KW - Low-noise amplifier

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Low-power low-noise amplifier employing body bias control with 28 nm FD-SOI process

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Keywords

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