We experimentally investigated the device performance of n +- poly-Si/PVD-TiN stacked gate FinFETs with different H fin's. It was found that mobility enhances in the tall H fin devices due to the increased tensile stress. However, as L g decreases, I on for tall H fin case becomes worse probably due to high R sp. It was also confirmed that V th variation increases with increasing H fin due to the rough etcing of fin sidewall.
|Title of host publication||IEEE International SOI Conference, SOI 2011|
|Publication status||Published - 20 Dec 2011|
|Event||2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States|
Duration: 3 Oct 2011 → 6 Oct 2011
|Name||Proceedings - IEEE International SOI Conference|
|Conference||2011 IEEE International SOI Conference, SOI 2011|
|Period||3/10/11 → 6/10/11|