Improvement in the passivation quality of titanium oxide thin films by doping with tantalum

Seira Yamaguchi, Hyunju Lee, Atsushi Ogura, Yoshio Ohshita

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate that the passivation quality of TiO2 electron-selective contacts can be improved by Ta doping. By using atomic layer deposition, 3.5-nm-thick, undoped TiO2 films and Ta-doped TiO2 (TiO2:Ta) films with Ta concentrations of 1.5, 2.8, and 5.5 at.% were formed on n-type crystalline silicon substrates with chemical SiO2 layers. After annealing at 130 °C, the effective minority-carrier lifetime (τeff) of the TiO2:Ta-passivated samples were significantly higher than that of the undoped-TiO2-passivated samples, and the highest τeff was obtained at a relatively low Ta-doping concentration of 1.5 at.%. These indicate that moderate Ta doping improves the passivation quality of TiO2 thin films.

Original languageEnglish
Article number138509
JournalThin Solid Films
Volume720
DOIs
Publication statusPublished - 28 Feb 2021

Keywords

  • Carrier-selective contact
  • Crystalline silicon solar cell
  • Passivation
  • Tantalum
  • Titanium oxide

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