Improved compact model for four-terminal DG MOSFETs

T. Nakagawa, T. Sekigawa, Toshiyuki Tsutsumi, M. Hioki, E. Suzuki, H. Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper reports improvements of the compact model for double-gate field-effect transistors (DG MOSFETs). The improvements make the model more accurate for wider range of device dimensions and device operation conditions. Carrier density calculation at the source-end is modified to the model applicable for wide range of gate voltages. By this modification, iteration counts for Newton's method are also drastically reduced. Two approaches to construct the transport equations, unified and separate current methods, in the channel are compared. Conventional charge-sheet model leads to too thin carrier density at the drain-end with unphysical high carrier velocity. Transport equation with velocity saturation and explicit drain electric field is proposed. Simulation result based on this equation is demonstrated.

Original languageEnglish
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages159-162
Number of pages4
Publication statusPublished - 2 Nov 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: 7 Mar 200411 Mar 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Conference

Conference2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period7/03/0411/03/04

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Keywords

  • Compact modeling
  • Double-gate
  • MOSFET

Cite this

Nakagawa, T., Sekigawa, T., Tsutsumi, T., Hioki, M., Suzuki, E., & Koike, H. (2004). Improved compact model for four-terminal DG MOSFETs. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 159-162). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).