High-Sri concentration MOCVD-grown strained GeSn thin films evaluated using HAXPES and XRD base on synchrotron technique

K. Usuda, M. Yoshiki, K. Suda, Atusi Ogura, M. Tomita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a GeSn growth method that uses new source gases to increase the Sn concentration of GeSn thin films, which are attracting attention as a next-generation semiconductor material for replacing for Si. Synchrotron radiation techniques are very useful for physical analysis of ultrathin films, particularly hard X-ray photoelectron spectroscopy, which can simultaneously analyze the outermost surface of the thin film and the bulk GeSn just underneath. As a result, we obtained results suggesting the growth of a high-quality GeSn thin film with suppression of surface Sn segregation and surface oxidation. Analysis of Sn concentration using a combination of Rutherford backscattering spectroscopy and secondary ion mass spectrometry revealed that the concentration of Sn was about 6.6 atom % and that the Sn content was uniform in the depth direction. These synchrotron techniques are expected to facilitate the preparation of high-quality, high-Sn GeSn thin films.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
PublisherElectrochemical Society Inc.
Pages411-418
Number of pages8
Edition7
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 1 Jan 2018
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 30 Sep 20184 Oct 2018

Publication series

NameECS Transactions
Number7
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period30/09/184/10/18

Fingerprint Dive into the research topics of 'High-Sri concentration MOCVD-grown strained GeSn thin films evaluated using HAXPES and XRD base on synchrotron technique'. Together they form a unique fingerprint.

  • Cite this

    Usuda, K., Yoshiki, M., Suda, K., Ogura, A., & Tomita, M. (2018). High-Sri concentration MOCVD-grown strained GeSn thin films evaluated using HAXPES and XRD base on synchrotron technique. In J-M. Hartmann, A. Thean, A. Ogura, X. Gong, D. Harame, M. Caymax, G. Niu, A. Schulze, Q. Liu, G. Mashi, S. Miyazaki, A. Mai, & M. Osting (Eds.), ECS Transactions (7 ed., pp. 411-418). (ECS Transactions; Vol. 86, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/08607.0411ecst