Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si

Michio Tajima, Shota Asahara, Yuta Satake, Atsushi Ogura

Research output: Contribution to journalArticlepeer-review

Abstract

We determined the entire spectral shape of a broad band around 0.8 eV, previously termed the C08-band, which was observed commonly in Si by room-temperature photoluminescence after electron irradiation. The band has a peak at 0.77 ± 0.01 eV with long tails on both sides. We identified that the C08-band has the same origin as the C-line and occurs as a result of the recombination between a free electron and a hole bound by the deep trap due to the interstitial C and O defects (CiOi). The long tails were explained by the superposition of phonon sidebands.

Original languageEnglish
Article number011006
JournalApplied Physics Express
Volume14
Issue number1
DOIs
Publication statusPublished - 7 Jan 2021

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