Evaluation of silicon substrates fabricated by seeding cast technique

T. Tachibana, T. Sameshima, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We evaluated the properties of crystalline defects in silicon substrate, and clarified the origin of small-angle grain boundaries. In order to eliminate the effects of grain boundaries, the ingot was fabricated by unidirectional solidification technique with seed crystal. In single-crystalline region, σ3 twin boundaries and SiC precipitates were observed near the seed crystal. No obvious correlation between twin boundaries and precipitates was observed. These defects decreased once and the precipitations appeared again. The density of precipitates increased through the crystal growth procedure. These precipitates were consisted of Si, C, and N. After the precipitation density increased, the small-angle grain boundaries appeared and some precipitates were observed at the boundaries. We considered the precipitation consisted of light element impurities such as C and N was one of the major origins of the small-angle grain boundary generation.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages133-136
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 1 Jan 2012
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: 25 Sep 201129 Sep 2011

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476

Conference

Conference14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
CountryJapan
CityMiyazaki
Period25/09/1129/09/11

Keywords

  • Crystalline defect
  • Small-angle grain boundary

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    Tachibana, T., Sameshima, T., Kojima, T., Arafune, K., Kakimoto, K., Miyamura, Y., Harada, H., Sekiguchi, T., Ohshita, Y., & Ogura, A. (2012). Evaluation of silicon substrates fabricated by seeding cast technique. In Defects-Recognition, Imaging and Physics in Semiconductors XIV (pp. 133-136). (Materials Science Forum; Vol. 725). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.725.133