EMI prediction method for sic inverter by developing an accurate model of power device

Sari Maekawa, Junichi Tsuda, Atsuhiko Kuzumaki, Shuhei Matsumoto, Hiroshi Mochikawa, Hisao Kubota

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In recent years, to reduce switching loss, the switching speed has been dramatically increased. The increase in EMI y the high time gradient may cause improper operation of neighbor devices. For the above reason, it is necessary to reduce the EMI by using noise filter. In order to estimate the EMI in the design phase before trial production, highly precise EMI analysis technology is required. Estimating the EMI for power electronics has been attempted by highly precise analytical modeling and modeling including parasitic components with electromagnetic-field analysis in recent years. In this study, Tri-phase 400Vrms inverter for system interconnections with SiC-JFET is analyzed. The frequency range is from 150 kHz to 30MHz, as specified by CISPR11 Class A. The study results showed that the noise terminal voltage is analyzable with an error of ±10 dB by highly precise modeling.

Original languageEnglish
Pages (from-to)461-467+11
Journalieej transactions on industry applications
Volume134
Issue number4
DOIs
Publication statusPublished - 2014

    Fingerprint

Keywords

  • Analysis
  • Conducted EMI noise
  • EMI
  • Inverter
  • Power electronics
  • Simulation

Cite this