Cross-sectional UV-Raman measurement for obtaining two-dimensional channel-stress profile in extremely high-performance pMOSFETs

H. Akamatsu, M. Takei, D. Kosemura, K. Nagata, S. Mayuzumi, S. Yamakawa, H. Wakabayashi, Atusi Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The two-dimensional channel-stress profiles in extremely high performance p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were evaluated by cross-sectional UV-Raman spectroscopy. We found the channel length dependence; the compressive stress in channel Si induced by compressive stress liner and SiGe embedded in the source and drain regions increased with reducing channel length from 5 μm to 0.5 μm. The compressive stress promoted the electrical properties of the pMOSFET. The effect of high-k and metal gate on the channel stress was investigated by measuring the stress before and after gate stack fabrication. Furthermore, we confirmed the difference in the two-dimensional channel-stress profile between (100) Si and (110) Si. This was achieved by the combination of cleavage and focused ion beam etching.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages27-32
Number of pages6
Edition1
DOIs
Publication statusPublished - 30 Dec 2010
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 26 Apr 201027 Apr 2010

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period26/04/1027/04/10

    Fingerprint

Cite this

Akamatsu, H., Takei, M., Kosemura, D., Nagata, K., Mayuzumi, S., Yamakawa, S., ... Ogura, A. (2010). Cross-sectional UV-Raman measurement for obtaining two-dimensional channel-stress profile in extremely high-performance pMOSFETs. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 27-32). (ECS Transactions; Vol. 28, No. 1). https://doi.org/10.1149/1.3375585