Composition control of Ni silicide by chemical vapor deposition using Ni(PF3)4 and Si3H8

Masato Ishikawa, Ikuyo Muramoto, Hideaki Machida, Yoshio Ohshita, Satoshi Imai, Atusi Ogura

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3 Citations (Scopus)


Ni suicide film was deposited by chemical vapor deposition (CVD) using an Ni(PF3)4/Si3H8 gas system. Ni(PF3)4 has no carbon atoms in its molecules and has sufficiently high vapor pressure for a mass flow controller to be used. We selected Si3H8 as the silicon precursor, which was decomposed by the interaction of a metalorganic Ni precursor at a low temperature at which thermal decomposition could not occur. Using these precursors, Ni suicide film was deposited at low temperatures (∼160 °C). The deposited Ni suicide film was polycrystalline and had low crystallinity. Ni2Si and Ni5Si2 were also formed. Varying the Si3H8 flow rate and substrate temperature changed the Si/Ni ratio of the films resulting in the flat-band voltage (Vfb) for the Ni suicide electrode shifting with the Si/Ni ratio. This CVD-deposited Ni suicide should be able to be applied to the fabrication of metal gate in future metal oxide semiconductor field-effect transistors (MOSFETs).

Original languageEnglish
Pages (from-to)474-477
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number2
Publication statusPublished - 8 Feb 2007


  • CVD
  • Ni precursor
  • Ni silicide
  • Ni(PF)
  • NiSi
  • SiH

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