Ni suicide film was deposited by chemical vapor deposition (CVD) using an Ni(PF3)4/Si3H8 gas system. Ni(PF3)4 has no carbon atoms in its molecules and has sufficiently high vapor pressure for a mass flow controller to be used. We selected Si3H8 as the silicon precursor, which was decomposed by the interaction of a metalorganic Ni precursor at a low temperature at which thermal decomposition could not occur. Using these precursors, Ni suicide film was deposited at low temperatures (∼160 °C). The deposited Ni suicide film was polycrystalline and had low crystallinity. Ni2Si and Ni5Si2 were also formed. Varying the Si3H8 flow rate and substrate temperature changed the Si/Ni ratio of the films resulting in the flat-band voltage (Vfb) for the Ni suicide electrode shifting with the Si/Ni ratio. This CVD-deposited Ni suicide should be able to be applied to the fabrication of metal gate in future metal oxide semiconductor field-effect transistors (MOSFETs).
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 8 Feb 2007|
- Ni precursor
- Ni silicide