Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement

Yuya Tanaka, Yutaka Noguchi, Hisao Ishii

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.

Original languageEnglish
Title of host publicationLow-Temperature-Processed Thin-Film Transistors
Pages45-50
Number of pages6
DOIs
Publication statusPublished - 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20103 Dec 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1287
ISSN (Print)0272-9172

Conference

Conference2010 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period29/11/103/12/10

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