Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement

Yuya Tanaka; Yutaka Noguchi; Hisao Ishii

doi:10.1557/opl.2011.1433

Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement

Yuya Tanaka, Yutaka Noguchi, Hisao Ishii

Department of Electronics and Bioinformatics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.

Original language	English
Title of host publication	Low-Temperature-Processed Thin-Film Transistors
Pages	45-50
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.1433
Publication status	Published - 2011
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: 29 Nov 2010 → 3 Dec 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1287
ISSN (Print)	0272-9172

Conference

Conference	2010 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	29/11/10 → 3/12/10

Access to Document

10.1557/opl.2011.1433

Cite this

@inproceedings{efe6d297ef5d4b009bea8b5c6e067206,

title = "Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement",

abstract = "The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.",

author = "Yuya Tanaka and Yutaka Noguchi and Hisao Ishii",

note = "Funding Information: This work was supported by the Global-COE program at Chiba University (Advanced School for Organic Electronics, G-03, MEXT), KAKENHI (Grants No. 21245042, 22750167), and the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST). YT gratefully acknowledges a JSPS Research Fellowships for Young Scientists (Grants No. 22·7042).; 2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",

year = "2011",

doi = "10.1557/opl.2011.1433",

language = "English",

isbn = "9781618395023",

series = "Materials Research Society Symposium Proceedings",

pages = "45--50",

booktitle = "Low-Temperature-Processed Thin-Film Transistors",

}

Tanaka, Y, Noguchi, Y & Ishii, H 2011, Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement. in Low-Temperature-Processed Thin-Film Transistors. Materials Research Society Symposium Proceedings, vol. 1287, pp. 45-50, 2010 MRS Fall Meeting, Boston, MA, United States, 29/11/10. https://doi.org/10.1557/opl.2011.1433

Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement. / Tanaka, Yuya; Noguchi, Yutaka; Ishii, Hisao.

Low-Temperature-Processed Thin-Film Transistors. 2011. p. 45-50 (Materials Research Society Symposium Proceedings; Vol. 1287).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement

AU - Tanaka, Yuya

AU - Noguchi, Yutaka

AU - Ishii, Hisao

N1 - Funding Information: This work was supported by the Global-COE program at Chiba University (Advanced School for Organic Electronics, G-03, MEXT), KAKENHI (Grants No. 21245042, 22750167), and the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST). YT gratefully acknowledges a JSPS Research Fellowships for Young Scientists (Grants No. 22·7042).

PY - 2011

Y1 - 2011

N2 - The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.

AB - The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.

UR - http://www.scopus.com/inward/record.url?scp=84859075834&partnerID=8YFLogxK

U2 - 10.1557/opl.2011.1433

DO - 10.1557/opl.2011.1433

M3 - Conference contribution

AN - SCOPUS:84859075834

SN - 9781618395023

T3 - Materials Research Society Symposium Proceedings

SP - 45

EP - 50

BT - Low-Temperature-Processed Thin-Film Transistors

T2 - 2010 MRS Fall Meeting

Y2 - 29 November 2010 through 3 December 2010

ER -

Capacitance-voltage measurement of an ambipolar pentacene field effect transistor in operation by using displacement current measurement

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this