BOX layer formation by oxygen precipitation at implantation damage of light ions

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Abstract

We have developed a novel SOI fabrication technique in which light ions such as H+ and He+ are implanted into a Si substrate (instead of O+ implantation in the SIMOX process). The atmospheric oxygen atoms precipitate at the implantation damage during annealing in an oxidized atmosphere. A continuous BOX layer was successfully formed in the Si substrate by choosing appropriate conditions (slow ramping rate and high oxygen concentration in the atmosphere.

Original languageEnglish
Pages15-16
Number of pages2
Publication statusPublished - 1 Jan 2001
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: 1 Oct 20014 Oct 2001

Conference

Conference2001 IEEE International SOI Conference
CountryUnited States
CityDurango, CO
Period1/10/014/10/01

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Cite this

Ogura, A. (2001). BOX layer formation by oxygen precipitation at implantation damage of light ions. 15-16. Paper presented at 2001 IEEE International SOI Conference, Durango, CO, United States.