We have developed a novel SOI fabrication technique in which light ions such as H+ and He+ are implanted into a Si substrate (instead of O+ implantation in the SIMOX process). The atmospheric oxygen atoms precipitate at the implantation damage during annealing in an oxidized atmosphere. A continuous BOX layer was successfully formed in the Si substrate by choosing appropriate conditions (slow ramping rate and high oxygen concentration in the atmosphere.
|Number of pages||2|
|Publication status||Published - 1 Jan 2001|
|Event||2001 IEEE International SOI Conference - Durango, CO, United States|
Duration: 1 Oct 2001 → 4 Oct 2001
|Conference||2001 IEEE International SOI Conference|
|Period||1/10/01 → 4/10/01|