Analysis of backscattering phenomenon from drain region in a silicon nanodiode

Toshiyuki Tsutsumi, Kazutaka Tomizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2005
Subtitle of host publication2005 International Microprocesses and Nanotechnology Conference
PublisherIEEE Computer Society
Pages262-263
Number of pages2
ISBN (Print)4990247221, 9784990247225
DOIs
Publication statusPublished - 1 Jan 2005
Event2005 International Microprocesses and Nanotechnology Conference - Tokyo, Japan
Duration: 25 Oct 200528 Oct 2005

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
Volume2005

Conference

Conference2005 International Microprocesses and Nanotechnology Conference
CountryJapan
CityTokyo
Period25/10/0528/10/05

Cite this

Tsutsumi, T., & Tomizawa, K. (2005). Analysis of backscattering phenomenon from drain region in a silicon nanodiode. In Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference (pp. 262-263). [1595314] (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference; Vol. 2005). IEEE Computer Society. https://doi.org/10.1109/imnc.2005.203838