A study on the evaluation method of glass frit paste for crystalline silicon solar cells

Mari Aoki, Takayuki Aoyama, Isao Sumita, Yasushi Yoshino, Atsushi Ogura, Yoshio Ohshita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Conductive paste degrades the solar cell performance due to the metallization. Silver crystallites at the interface may shunt the p-n junction, which degrades the cell performance. Besides, it is conceivable that glass frit itself should not effectively damage silicon, but there is no clear evidence for the proof. In this study, the 'floating contact method' proposed by R. Hoenig is used to evaluate the effects of glass frit by making the floating contacts with the glass frit. It is conclude that glass frit itself causes shunts and increases the saturation current, which corresponds carrier recombination beneath the glass frit contacts.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2850-2853
Number of pages4
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period5/06/1610/06/16

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Keywords

  • c-si
  • floating contact
  • glass frit
  • n-type
  • paste
  • recombination
  • screen print

Cite this

Aoki, M., Aoyama, T., Sumita, I., Yoshino, Y., Ogura, A., & Ohshita, Y. (2016). A study on the evaluation method of glass frit paste for crystalline silicon solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2850-2853). [7750174] (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750174