4-terminal FinFETs with high threshold voltage controllability

Y. X. Liu, M. Masahara, K. Ishii, T. Sekigawa, H. Takashima, H. Yamauchi, Toshiyuki Tsutsumi, K. Sakamoto, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

A method for the fabrication of 4-terminal FinFETs with high threshold voltage controllability is discussed. In the method, these FinFETs are fabricated using orientation-dependent wet etching. The method offers the advantage of forming precise Si-fins with an automatically flat channel surface. 4-T FinFETs with the thinner Si-fin channels with high Vth controllability can be prepared using the method.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages207-208
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 21 Jun 200423 Jun 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period21/06/0423/06/04

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Liu, Y. X., Masahara, M., Ishii, K., Sekigawa, T., Takashima, H., Yamauchi, H., ... Suzuki, E. (2004). 4-terminal FinFETs with high threshold voltage controllability. In Device Research Conference - Conference Digest, 62nd DRC (pp. 207-208). [VI.B.-1] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367867