3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, Atusi Ogura, Y. Numasawa, I. OmuraH. Ohashi, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, - Vce(sat) reduction from 1.70 to 1.26 V - was experimentally confirmed for the 3D scaled IGBTs.

Original languageEnglish
Title of host publicationProceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
EditorsYajie Qin, Zhiliang Hong, Ting-Ao Tang
PublisherIEEE Computer Society
Pages1137-1140
Number of pages4
ISBN (Electronic)9781509066247
DOIs
Publication statusPublished - 1 Jul 2017
Event12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 - Guiyang, China
Duration: 25 Oct 201728 Oct 2017

Publication series

NameProceedings of International Conference on ASIC
Volume2017-October
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Conference

Conference12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017
CountryChina
CityGuiyang
Period25/10/1728/10/17

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  • Cite this

    Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., ... Iwai, H. (2017). 3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). In Y. Qin, Z. Hong, & T-A. Tang (Eds.), Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017 (pp. 1137-1140). (Proceedings of International Conference on ASIC; Vol. 2017-October). IEEE Computer Society. https://doi.org/10.1109/ASICON.2017.8252681