• 2892 Citations
  • 23 h-Index
1983 …2019
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Fingerprint Dive into the research topics where Atusi Ogura is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

Raman spectroscopy Engineering & Materials Science
silicon Physics & Astronomy
Silicon Engineering & Materials Science
Substrates Engineering & Materials Science
Solar cells Engineering & Materials Science
Crystalline materials Engineering & Materials Science
Chemical vapor deposition Engineering & Materials Science
Annealing Engineering & Materials Science

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Research Output 1983 2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Degradation
Electric potential

Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering

Tatejima, K., Nagata, T., Ishibashi, K., Takahashi, K., Suzuki, S., Ogura, A. & Chikyow, T., 1 Jan 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBK03.

Research output: Contribution to journalArticle

Open Access
Buffer layers
Crystal growth
Magnetron sputtering
crystal growth
radio frequencies

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., 16 Jan 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Demonstrations
Electric potential
electric potential
scaling

Effect of additives in electrode paste of p-type crystalline Si solar cells on potential-induced degradation

Jonai, S., Tanaka, A., Muramatsu, K., Saito, G., Nakamura, K., Ogura, A., Ohshita, Y. & Masuda, A., 1 Aug 2019, In : Solar Energy. 188, p. 1292-1297 6 p.

Research output: Contribution to journalArticle

Silicon solar cells
Ointments
Crystalline materials
Degradation
Electrodes

Effect of oxygen precipitation through annealing process on lifetime degradation by Czochralski-Si crystal growth conditions

Kinoshita, K., Kojima, T., Onishi, K., Ohshita, Y. & Ogura, A., 1 Jan 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBF02.

Research output: Contribution to journalArticle

Open Access
Crystal growth
crystal growth
Annealing
degradation
Degradation